AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate. XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 ☌). The XPS analysis on plasma treated SiO 2 /Si and Si 3 N 4 /Si surfaces revealed surface composition changes compared to as-grown SiO 2 films (Fig. (SFI), spectromicroscopy, silicon dioxide, parallel imaging, spherical mirror analyser (SMA), multivariate analysis. increases the O 1s, Si 2s and Si 2p peaks from the SiO2 substrate reduce relative to C 1s. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. convention in XPS to use positive values for binding energy. High resolution analysis (narrow energy range) The chemical states of carbon can be seen from C1s peak positions. The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. XPS spectrum of polyethylene terephthalate (PET) Survey analysis (wide energy range) Identification and quantification of elements (C, O) present on the surface. AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate.ĪB - The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 ☌). Furthermore, line shape analysis of O1s XPS peak allows to distinguish between single OTi and OSi bonds and also to disclose the presence of cross linking SiOTi bonds, that act as bridges between SiO2and TiO2 moieties. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. Amorphous SiO2, TiO2 and xSiO2(1x)TiO2 ceramic materials with selected values of x 0.5. The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. N2 - The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). samples exhibit a secondary structure to higher binding energy of the main lattice oxygen peak.
T1 - Selective removal of native SiO2 Using XeF2 The Au 4f peak appears quite strong because of its higher photoionization cross-section (17.47) compared to that of Si 2p (0.865).
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